High brilliance edge emitting semiconductor based on an unique vertical growth profile
Patent #14058
Background
Conventional high-power lasers often exhibit poor beam quality because multiple transverse modes are excited simultaneously. This results in complex near-field profiles and broad far-field distributions. Existing approaches to mode control often cause additional losses or limit the maximum achievable output power. The invention addresses this problem through the targeted spatial design of the refractive index profiles within the waveguide.
Technical Description
The device comprises a waveguide with several layers of varying refractive indices. At least one layer has a refractive index that varies across its thickness. This results in controlled coupling between transverse modes. The patent specification describes various embodiments with single or multiple low- or high-refractive-index layers, as well as periodic structures. Several figures demonstrate that unwanted secondary maxima in the near field can be suppressed whilst simultaneously generating a single intense far-field maximum. Additionally, designs incorporating integrated gain regions, pump sources and resonator structures are described.
The technology can be used in both semiconductor lasers and other integrated optical components.
Possible Applications
The invention paves the way for single mode high brightness lasers (cw and pulsed) used in optical communication, material processing, sensor technology, and for medical and scientific laser systems. Further applications include fibre-coupled laser modules, integrated photonic components and pump sources for solid state or fiber lasers. Due to the improved beam quality, the technology is particularly relevant for systems that need to combine high brightness with inexpensive beam shaping.
