Non-volatile Flash memories can store data for years without refreshing them, but they write information about 1000 times slower than volatile dynamic random access memories (DRAMs).
Technical Description
The invention presented here is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on the storage of either holes or electrons, and in which the erasing process is based on the recombination of electrons and holes. This memory cell can be switched between electron and hole storage, thus they can be used as binary storage elements.
Possible Applications
The presented memory cell is suitable for optoelectronic devices and for data storage. Computer Industry, optoelectronics, consumer electronics.
Storage of electrons in a memory cell
Benefits
Long-term data storage
High read/write speed
Low write/erase voltage (less than 2V)
[...] further benefits online
Technology Readiness Level
Experimental proof of concept (TRL: 3)
