This innovative memory cell offers both high performance and long life and can be used in the computer industry, optoelectronics or consumer electronics.
- Hole storage
- Fast write/erase speed
- High switching speed
- Date storage for many years
- Use of semiconductor - nanostructures (quantum dots, -wires or -wells)
- Modulation-doped field effect transistor (MODFET) type
The presented memory cell is suitable for opto-electronic devices and for data storage. Computer industry, optoelectronics, consumer electronics
Background
Computer data storage can be classified into volatile and non-volatile storage. Volatile memories like dynamic random access memories (DRAMs) are short-term memories with a high writing speed, but they require an external power source for data storage – whereas non-volatile flash memories do not need an external power source and are able to store data for years, but they write information about 1000 times slower than DRAMs.
Technical Description
Our novel semiconductor nanostructure based memory cell combines the advantages of the non-volatility of flash memories with the performance and the endurance of a DRAM. The memory comprises a strained double heterostructure, has an inner semiconductor layer comprising quantum dots and is sandwiched by two outer semiconductor layers. The memory cell uses holes as charge carriers.
Ina Krüger
Technology Transfer Manager
+49 (0)30 314-75916
ina.krueger@tu-berlin.de
Experimental proof of concept
approved: US, JP, DE, FR, GB, IE, KR
Technische Universität Berlin
- Licensing
- Patent Purchase
- R&D Cooperation
