Memory Cell for Data Storage – IV
Patent 11010/TUB

The presented memory cell is suitable for optoelectronic devices and for data storage. It can be used in the computer industry, optoelectronics or consumer electronics, for example.

Benefits
  1. Long-term data storage
  2. High read/write speed
  3. Low write/erase voltage (less than 2V)
  4. Switchable between hole and electron storage
  5. High switching speed
Possible Applications

The presented memory cell is suitable for optoelectronic devices and for data storage. Computer Industry, optoelectronics, consumer electronics.

Background

Non-volatile Flash memories can store data for years without refreshing them, but they write information about 1000 times slower than volatile dynamic random access memories (DRAMs).

Technical Description

The invention presented here is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on the storage of either holes or electrons, and in which the erasing process is based on the recombination of electrons and holes. This memory cell can be switched between electron and hole storage, thus they can be used as binary storage elements.

Contact Us

Ina Krüger

License Manager

+49 (0)30 314-75916
ina.krueger@tu-berlin.de

Technology Readiness Level
TRL 3

Applied research

Property Rights

pending: EP, US
approved: DE

Patent Holder

Technische Universität Berlin

Possible Cooperation
  • R&D Cooperation
  • Patent Purchase
  • Licensing