The presented memory cell is suitable for optoelectronic devices and for data storage. It can be used in the computer industry, optoelectronics or consumer electronics, for example.
- Long-term data storage
- High read/write speed
- Low write/erase voltage (less than 2V)
- Switchable between hole and electron storage
- High switching speed
The presented memory cell is suitable for optoelectronic devices and for data storage. Computer Industry, optoelectronics, consumer electronics.
Background
Non-volatile Flash memories can store data for years without refreshing them, but they write information about 1000 times slower than volatile dynamic random access memories (DRAMs).
Technical Description
The invention presented here is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on the storage of either holes or electrons, and in which the erasing process is based on the recombination of electrons and holes. This memory cell can be switched between electron and hole storage, thus they can be used as binary storage elements.
Ina Krüger
Technology Transfer Manager
+49 (0)30 314-75916
ina.krueger@tu-berlin.de
Experimental proof of concept
approved: DE, FR, GB, US
Technische Universität Berlin
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